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NRVBS3100T3G - Surface Mount Schottky Power Rectifier

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount.

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Datasheet Details

Part number NRVBS3100T3G
Manufacturer ON Semiconductor
File Size 178.21 KB
Description Surface Mount Schottky Power Rectifier
Datasheet download datasheet NRVBS3100T3G Datasheet
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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier MBRS3100T3G, NRVBS3100T3G This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
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