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NRVBA1H100 - Schottky Power Rectifier

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount.

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Datasheet Details

Part number NRVBA1H100
Manufacturer ON Semiconductor
File Size 269.14 KB
Description Schottky Power Rectifier
Datasheet download datasheet NRVBA1H100 Datasheet
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Full PDF Text Transcription

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Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package MBRA1H100, NRVBA1H100, NRVBA1H100N Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
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