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NLX1G332 - 3-Input OR Gate

Features

  • High Speed: tPD = 2.4 ns (Typ) @ VCC = 5.0 V.
  • Designed for 1.65 V to 5.5 V VCC Operation.
  • Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C.
  • 24 mA Balanced Output Source and Sink Capability.
  • Balanced Propagation Delays.
  • Overvoltage Tolerant (OVT) Input Pins.
  • Ultra.
  • Small Packages.
  • These are Pb.
  • Free Devices A 1 6C GND 2 5 VCC B 3 4Y www. onsemi. com.

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Datasheet Details

Part number NLX1G332
Manufacturer onsemi
File Size 71.01 KB
Description 3-Input OR Gate
Datasheet download datasheet NLX1G332 Datasheet

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Full PDF Text Transcription

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NLX1G332 3-Input OR Gate The NLX1G332 is an advanced high−speed 3−input CMOS OR gate in ultra−small footprint. The NLX1G332 input structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage. Features • High Speed: tPD = 2.4 ns (Typ) @ VCC = 5.0 V • Designed for 1.65 V to 5.5 V VCC Operation • Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C • 24 mA Balanced Output Source and Sink Capability • Balanced Propagation Delays • Overvoltage Tolerant (OVT) Input Pins • Ultra−Small Packages • These are Pb−Free Devices A 1 6C GND 2 5 VCC B 3 4Y www.onsemi.com MARKING DIAGRAMS UDFN6 1.0 x 1.0 6M CASE 517BX 1 UDFN6 1.2 x 1.0 6 M CASE 517AA 1 UDFN6 1.45 x 1.
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