NJW1302G - PNP Silicon Power Bipolar Transistors

onsemi

Download the NJW1302G datasheet PDF. This datasheet also covers the NJW3281G variant, as both devices belong to the same pnp silicon power bipolar transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

Exceptional Safe Operating Area.
NPN/PNP Gain Matching within 10% from 50 mA to 5 A.
Excellent Gain Linearity.
High BVCEO.
High Frequency.
These Devices are Pb.
Free and are RoHS Compliant Benefits.
Reliable Performance at Higher Powers.
Symmetrical Characteristics in Complementary Configurations.
Accurate Reproduction of Input Signal.
Greater Dynamic Range.
High Amplifier Bandwidth Applica.

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NJW1302G pnp silicon power bipolar transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (NJW3281G_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	NJW1302G
Manufacturer	onsemi
File Size	111.84 KB
Description	PNP Silicon Power Bipolar Transistors
Datasheet	NJW1302G Datasheet

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Other Datasheets by onsemi

Part Number	Description
NJW0281G	Complementary NPN Power Bipolar Transistors
NJW0302G	Complementary PNP Power Bipolar Transistors
NJW21193G	Silicon Power Transistors
NJW21194G	Silicon Power Transistors
NJW3281G	NPN Silicon Power Bipolar Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications.