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NJVNJD1718 - Power Transistors

Features

  • Low Collector.
  • Emitter Saturation Voltage.
  • High Switching Speed.
  • Epoxy Meets UL 94 V.
  • 0 @ 0.125 in.
  • NJV Prefix for Automotive and Other.

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Full PDF Text Transcription

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NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • Low Collector−Emitter Saturation Voltage • High Switching Speed • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCB VCEO VEB IC ICM IB PD −50 Vdc −50 Vdc −5 Vdc −2 Adc −3 Adc −0.
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