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NIC9N05ATS1 - Protected Power MOSFET

Download the NIC9N05ATS1 datasheet PDF (NIC9N05TS1 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for protected power mosfet.

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Note: The manufacturer provides a single datasheet file (NIC9N05TS1_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NIC9N05ATS1
Manufacturer onsemi
File Size 111.98 KB
Description Protected Power MOSFET
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Full PDF Text Transcription

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NIC9N05TS1, NIC9N05ATS1 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Operating and Storage Temperature Range Electro−Static Discharge Capability (HBM) (MM) VDSS VGS TJ, Tstg ESD 52−59 ±15 −55 to 150 5000 500 V V °C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.
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