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NGTB60N60SWG - IGBT

Features

  • a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

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Full PDF Text Transcription

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NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
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