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NGTB20N120IHWG - IGBT

Features

  • a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching.

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Full PDF Text Transcription

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NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on−state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
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