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NGD8209NT4G - Ignition IGBT

Download the NGD8209NT4G datasheet PDF. This datasheet also covers the NGD8209N variant, as both devices belong to the same ignition igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • monolithic circuitry integrating ESD and Over.
  • Voltage clamped protection for use in inductive coil drivers.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NGD8209N-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

Part Number Description
NGD8209N Ignition IGBT
NGD8201AN Ignition IGBT
NGD8201ANT4G Ignition IGBT
NGD8201B Ignition IGBT
NGD8201NT4G Ignition IGBT

Full PDF Text Transcription

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NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com • • • • • • • Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are Pb−Free Devices 12 AMPS 410 VOLTS VCE(on) 3 2.0 V @ IC = 6.0 A, VGE . 4.
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