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NGB8207ABNT4G - Ignition IGBT

Download the NGB8207ABNT4G datasheet PDF (NGB8207AN included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for ignition igbt.

Features

  • monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers.

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Note: The manufacturer provides a single datasheet file (NGB8207AN_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
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