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NDSH30120CDN - SiC Schottky Diode

Datasheet Summary

Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 110 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb.
  • Free 2LI (on second level interconnection).

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Datasheet preview – NDSH30120CDN

Datasheet Details

Part number NDSH30120CDN
Manufacturer ON Semiconductor
File Size 296.91 KB
Description SiC Schottky Diode
Datasheet download datasheet NDSH30120CDN Datasheet
Additional preview pages of the NDSH30120CDN datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L NDSH30120CDN 1. Anode 2. Cathode/ 3. Anode Case Schottky Diode Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
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