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NDP06N62Z - N-Channel Power MOSFET

Features

  • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb.
  • Free and RoHS Compliant VDSS 620 V Rating Drain.
  • to.
  • Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate.
  • to.
  • Source Voltage Single Pulse Avalanche Energy, ID = 6.0 A ESD (HBM) (JESD 22.
  • A114) RMS Isolation Voltage (t = 0.3 sec. , R. H. ≤ 30%,.

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Datasheet Details

Part number NDP06N62Z
Manufacturer ON Semiconductor
File Size 159.31 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NDP06N62Z Datasheet
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www.DataSheet4U.com NDF06N62Z, NDP06N62Z N-Channel Power MOSFET 620 V, 0.98 W, Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant VDSS 620 V Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 6.0 A ESD (HBM) (JESD 22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H.
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