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NDDP010N25AZ - Power MOSFET

Features

  • High Speed Switching.
  • Low Gate Charge.
  • ESD Diode-Protected Gate.
  • 100% Avalanche Tested.
  • Pb-Free, Halogen Free and RoHS Compliance Electrical Connection 2,4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW10s, duty cycle1% VDSS VGSS ID IDP Power Dissipation Tc=25C PD Junction Temperature Tj Storage Temperature Tstg Source Current (Body Di.

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NDDP010N25AZ Power MOSFET 250V, 10A, 420mΩ, N-Channel www.onsemi.
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