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NDD60N360U1
N-Channel Power MOSFET 600 V, 360 mW
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC
Power Dissipation – RqJC Pulsed Drain Current
Steady State Steady State
TC = 25°C TC = 100°C TC = 25°C
tp = 10 ms
VDSS VGS ID
PD
IDM
600 V ±25 V 11 A 6.9 114 W
44 A
Operating Junction and Storage Temperature
TJ, TSTG
−55 to +150
°C
Source Current (Body Diode)
IS 13 A
Single Pulse Drain−to−Source Avalanche Energy (ID = 3.5 A)
EAS
64 mJ
RMS Isolation Voltage (t = 0.3 sec., R.H.
NDD60N360U1 Datasheet
