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NCP81080 - Dual MOSFET Gate Driver

Description

Pin No.

side driver 2 HI High Side Input 3 LI Low Side Input 4 VSS Negative Supply Return 5 LO Low Side Output 6 HS High Side Source 7 HO High Side Output 8 HB High

Features

  • Drives Two N.
  • Channel MOSFETs in High.
  • Side and Low.
  • Side Configuration.
  • Floating Top Driver Accommodates Boost Voltage up to 180 V.
  • Switching Frequency up to 500 Khz.
  • Current Shoot.
  • Through Protection.
  • 135 ns Fixed internal Dead.
  • Time.
  • 44 ns Rising and 30 ns Falling Propagation Delay Times.
  • 0.5 A peak Source Current with 0.8 A Peak Sink Current.
  • 19 ns Rise/17 ns Fall Times with 1000.

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Datasheet preview – NCP81080

Datasheet Details

Part number NCP81080
Manufacturer ON Semiconductor
File Size 336.53 KB
Description Dual MOSFET Gate Driver
Datasheet download datasheet NCP81080 Datasheet
Additional preview pages of the NCP81080 datasheet.

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Full PDF Text Transcription

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Dual MOSFET Gate Driver, High Performance NCP81080 The NCP81080 is a high performance dual MOSFET gate driver optimized to drive half bridge N−Channel MOSFETs. The NCP81080 uses a bootstrap technique to ensure a proper drive of the high−side power switch. A high floating top driver design can accommodate HB voltage as high as 180 V. The NCP81080 has an internal anti−cross conduction circuit with a 135 ns fixed internal dead−time to prevent current shoot−through. The NCP81080 is available in 2x2mm DFN and SOIC packages.
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