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NCD57200 - Half Bridge Gate Driver

Datasheet Summary

Description

No.

Low side and main power supply.

A good quality bypassing capacitor is required from this pin to GND and should be placed close to the pins for best results.

Features

  • include two independent inputs with deadtime and interlock, accurate asymmetric UVLOs, and short and matched propagation delays. The NCD57200 operates with its VDD/VBS up to 20 V. Features.
  • High Peak Output Current (+1.9 A/- 2.3 A).
  • Low Output Voltage Drop for Enhanced IGBT Conduction.
  • Floating Channel for Bootstrap Operation up to +800 V.
  • CMTI up to 100 kV/ms.
  • Reliable Operation for VS Negative Swing to - 800 V.
  • VDD & VBS Supply Range up to 20 V.
  • 3.3 V, 5 V, a.

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Datasheet preview – NCD57200

Datasheet Details

Part number NCD57200
Manufacturer ON Semiconductor
File Size 1.55 MB
Description Half Bridge Gate Driver
Datasheet download datasheet NCD57200 Datasheet
Additional preview pages of the NCD57200 datasheet.

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Full PDF Text Transcription

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Half Bridge Gate Driver (Isolated High & Non- Isolated Low) NCD57200 The NCD57200 is a high voltage gate driver with one non- isolated low side gate driver and one galvanically isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. Isolated high side driver can be powered with an isolated power supply or with Bootstrap technique from the low side power supply. The galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt. The optimized output stages provide a mean of reducing IGBT losses. Its features include two independent inputs with deadtime and interlock, accurate asymmetric UVLOs, and short and matched propagation delays.
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