Datasheet4U Logo Datasheet4U.com

NCD57081C - Isolated High Current IGBT Gate Driver

Download the NCD57081C datasheet PDF. This datasheet also covers the NCD57080A variant, as both devices belong to the same isolated high current igbt gate driver family and are provided as variant models within a single manufacturer datasheet.

Description

No.

Power Input side power supply.

and should be placed close to the pins for best results.

Features

  • High Peak Output Current (+6.5 A/.
  • 6.5 A).
  • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn.
  • on (Version A).
  • Short Propagation Delays with Accurate Matching.
  • IGBT/MOSFET Gate Clamping during Short Circuit.
  • IGBT/MOSFET Gate Active Pull Down.
  • Tight UVLO Thresholds for Bias Flexibility.
  • Wide Bias Voltage Range including Negative VEE2 (Version B).
  • 3.3 V, 5 V, and 15.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NCD57080A-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NCD57081C
Manufacturer onsemi
File Size 1.15 MB
Description Isolated High Current IGBT Gate Driver
Datasheet download datasheet NCD57081C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NCD1015ZG Read-Only RFID Transponder IXYS
NCD1015ZP Read-Only RFID Transponder IXYS
NCD103K500Y5PKTB Ceramic Disc Capacitors NIC Components
NCD104M50Z5UF Ceramic Disc Capacitors NIC Components
NCD2100 Digital Programmable Capacitor IXYS

Other Datasheets by onsemi

Part Number Description
NCD57081A Isolated High Current IGBT Gate Driver
NCD57081B Isolated High Current IGBT Gate Driver
NCD57080A Isolated High Current IGBT Gate Driver
NCD57080B Isolated High Current IGBT Gate Driver
NCD57080C Isolated High Current IGBT Gate Driver

Full PDF Text Transcription

Click to expand full text
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y (x = D or V, y = A, B or C) NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in narrow−body SOIC−8 package. Features • High Peak Output Current (+6.5 A/−6.
Published: |