MTSF3N03HD - Power MOSFET

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ON Semiconductor

Part number	MTSF3N03HD
Manufacturer	ON Semiconductor
File Size	138.07 KB
Description	Power MOSFET
Datasheet	MTSF3N03HD Datasheet
Additional preview pages of the MTSF3N03HD datasheet.

rdless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1500 VDS = 0 V 1200 Ciss.

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Published: Jan 15, 2016 |