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MMSF5P02HDR2 - Power MOSFET

Download the MMSF5P02HDR2 datasheet PDF. This datasheet also covers the MMSF5P02HD variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • d to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 6000 Ciss 4000 Crss TJ = 25°C VGS = 0 V C,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMSF5P02HD-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by onsemi

Part Number Description
MMSF5P02HD Power MOSFET
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MMSF5N02HDR2 Power MOSFET
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MMSF3350 Single N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MMSF5P02HD Preferred Device Power MOSFET 5 Amps, 20 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.