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MCH3478 - N-Channel Power MOSFET

Key Features

  • Low ON-resistance.
  • 1.8V drive.
  • Protection diode in.
  • Ultrahigh speed switching.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (Pulse) VDSS VGSS ID ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions Duty cycle≤1% PW≤10μs, duty cycle≤1% When mounted.

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Datasheet Details

Part number MCH3478
Manufacturer onsemi
File Size 194.62 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MCH3478 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1353B MCH3478 N-Channel Power MOSFET 30V, 2A, 165mΩ, Single MCPH3 http://onsemi.com Features • Low ON-resistance • 1.8V drive • Protection diode in • Ultrahigh speed switching • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (PW≤10s) Drain Current (Pulse) VDSS VGSS ID ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions Duty cycle≤1% PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) When mounted on ceramic substrate (900mm2×0.8mm), PW=10s Ratings 30 ±12 2 2.5 8 0.8 1.