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K3816 - 2SK3816

Key Features

  • ON-resistance RDS(on)1=20mΩ(typ. ).
  • Input capacitance Ciss=1780pF(typ. ).
  • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 40 160 1.65 50 Unit V V A A W W Continued on next page. Package Dimensions unit : mm (typ) 7537-001 Package Dimensio.

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Datasheet Details

Part number K3816
Manufacturer onsemi
File Size 203.17 KB
Description 2SK3816
Datasheet download datasheet K3816 Datasheet

Full PDF Text Transcription for K3816 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3816. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capaci...

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onsemi.com Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 40 160 1.65 50 Unit V V A A W W Continued on next page. Package Dimensions unit : mm (typ) 7537-001 Package Dimensions unit : mm (typ) 7535-001 2SK3816-1E 10.0 4.5 8.0 1.3 10.0 4 4.5 1.3 2SK3816-DL-1E 8.0 0.9 1.75 1.4 9.2 1.2 13.4 0.9 1.75 3.0 9.2 1.2 1.35 7.9 7.9