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J665 - P-Channl Silicon MOSFET

Features

  • ON-resistance RDS(on)1=59mΩ(typ. ).
  • 4V drive.
  • Input capacitance Ciss=4200pF (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=--30V, L=100μH, IAV=--27A.

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Datasheet Details

Part number J665
Manufacturer onsemi
File Size 296.15 KB
Description P-Channl Silicon MOSFET
Datasheet download datasheet J665 Datasheet

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Ordering number : EN8590A 2SJ665 P-Channel Power MOSFET –100V, –27A, 77mΩ, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=59mΩ(typ.) • 4V drive • Input capacitance Ciss=4200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--27A (Fig.
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