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ISL9V3040D3STV - N-Channel IGBT

Datasheet Summary

Features

  • SCIS Energy = 300 mJ at TJ = 25°C.
  • Logic Level Gate Drive.
  • This Device is Pb.
  • Free and is RoHS Compliant.
  • AEC.
  • Q101 Qualified and PPAP Capable.

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Datasheet preview – ISL9V3040D3STV

Datasheet Details

Part number ISL9V3040D3STV
Manufacturer ON Semiconductor
File Size 636.77 KB
Description N-Channel IGBT
Datasheet download datasheet ISL9V3040D3STV Datasheet
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Full PDF Text Transcription

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ISL9V3040D3STV ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • This Device is Pb−Free and is RoHS Compliant • AEC−Q101 Qualified and PPAP Capable Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications MAXIMUM RATINGS (TJ = 25°C Unless Otherwise Stated) Parameter Symbol Value Units Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) ISCIS = 14.2 A, L = 3.0 mHz, RGE = 1 KW (Note 1), TC = 25°C ISCIS = 10.6 A, L = 3.0 mHz, RGE = 1 KW (Note 2), TC = 150°C Collector Current Continuous, at VGE = 4.0 V, TC = 25°C Collector Current Continuous, at VGE = 4.
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