IMD10AMT1G
Dual Bias Resistor Transistor
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
- High Current: IC = 500 m A max
- This is a Pb- Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector- Base Voltage
V(BR)CBO
Collector- Emitter Voltage
V(BR)CEO
Emitter- Base Voltage
V(BR)EBO
Collector Current
- Continuous
THERMAL CHARACTERISTICS
Vdc Vdc Vdc m Adc
Characteristic
Symbol
Max
Unit
Power Dissipation-
285 m W
Junction Temperature
°C
Storage Temperature
Tstg
- 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- Total for both Transistors. http://onsemi.
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