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H11F1M - Photo FET Optocouplers

Datasheet Summary

Description

The H11FXM series consists of a Gallium Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo

detector.

free control o

Features

  • As a Remote Variable Resistor:.
  • ≤ 100 W to ≥ 300 MW.
  • ≤15 pF Shunt Capacitance.
  • ≥100 GW I/O Isolation Resistance.
  • As an Analog Switch:.
  • Extremely Low Offset Voltage.
  • 60 Vpk.
  • pk Signal Capability.
  • No Charge Injection or Latch.
  • Up.
  • UL Recognized (File #E90700).
  • These are Pb.
  • Free Devices.

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Datasheet preview – H11F1M

Datasheet Details

Part number H11F1M
Manufacturer ON Semiconductor
File Size 328.08 KB
Description Photo FET Optocouplers
Datasheet download datasheet H11F1M Datasheet
Additional preview pages of the H11F1M datasheet.

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Full PDF Text Transcription

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Photo FET Optocouplers H11F1M, H11F2M, H11F3M General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in−line packages.
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