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FW389 - Power MOSFET

Key Features

  • ON-resistance Nch : RDS(on)1=165mW(typ. ).
  • Input Capacitance Nch : Ciss=490pF(typ. ) Pch : RDS(on)1=230mW(typ. ) Pch : Ciss=1000pF(typ. ).
  • 4V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤100ms) VDSS VGSS ID IDP Drain Current (PW≤10μs) Allowable Power Dissipatio.

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Datasheet Details

Part number FW389
Manufacturer onsemi
File Size 369.51 KB
Description Power MOSFET
Datasheet download datasheet FW389 Datasheet

Full PDF Text Transcription for FW389 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FW389. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENA2066A FW389 Power MOSFET 100V, 2A, 225mΩ, –100V, –2A, 300mΩ, Complementary Dual SOIC8 http://onsemi.com Features • ON-resistance Nch : RDS(on)1=165mW...

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SOIC8 http://onsemi.com Features • ON-resistance Nch : RDS(on)1=165mW(typ.) • Input Capacitance Nch : Ciss=490pF(typ.) Pch : RDS(on)1=230mW(typ.) Pch : Ciss=1000pF(typ.) • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤100ms) VDSS VGSS ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature IDP PD PT Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 EAS IAV *1 N-Channel:VDD=10V, L=2mH, IA

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