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FGAF30S65AQ - IGBT

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ. ) @ IC = 30 A.
  • 100% of the Parts Tested for ILM (Note 1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • IGBT with Monolithic Reverse Conducting Diode.
  • This Device is Pb.
  • Free and is RoHS Complia.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Field Stop Trench IGBT, 30 A, 650 V FGAF30S65AQ Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.