FDS8949-F085 Key Features
- Max rDS(on) = 29mΩ at VGS = 10V
- Max rDS(on) = 36mΩ at VGS = 4.5V
- Low gate charge
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- Qualified to AEC Q101
- RoHS pliant
- Part: FDS8949-F085
- Manufacturer: onsemi
- Size: 461.82 KB
Related onsemi Datasheets
| Part Number | Description |
|---|---|
| FDS8949 | Dual N-Channel MOSFET |
| FDS8935 | Dual P-Channel MOSFET |
| FDS8958A-F085 | Dual N&P-Channel MOSFET |
| FDS8958B | Dual N & P-Channel Power MOSFET |
| FDS8978 | N-Channel MOSFET |