FDS4685
Description
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process.
Key Features
- 8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V RDS(ON) = 0.035 Ω @ VGS = –4.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- Power management
