FCH22N60N - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FCH22N60N
Manufacturer	ON Semiconductor
File Size	391.81 KB
Description	N-Channel MOSFET
Datasheet	FCH22N60N Datasheet
Additional preview pages of the FCH22N60N datasheet.

Product details

Description

The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. resistance, superior switching performance and ruggedness.

Features

650 V @ TJ = 150°C.
RDS(on) = 140 mW (Typ. ) @ VGS = 10 V, ID = 11 A.
Ultra Low Gate Charge (Typ. Qg = 45 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 196.4 pF).
100% Avalanche Tested.
This Device is Pb.
Free and is RoHS Compliant.

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Published: Nov 26, 2024 |