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BXL4004 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)1=3mΩ (typ. ).
  • 4.5V drive.
  • Input capacitance Ciss=8200pF (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=24V, L=100μH, IAV=60A (Fig.1.

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Datasheet Details

Part number BXL4004
Manufacturer onsemi
File Size 221.72 KB
Description N-Channel Power MOSFET
Datasheet download datasheet BXL4004 Datasheet

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Ordering number : EN9050A BXL4004 N-Channel Power MOSFET 40V, 100A, 3.9mΩ, TO-220-3L http://onsemi.com Features • ON-resistance RDS(on)1=3mΩ (typ.) • 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=24V, L=100μH, IAV=60A (Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 40 ±20 100 400 1.75 75 150 --55 to +150 420 60 Unit V V A A W W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
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