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BTA25H-800CW3G - Triacs

Download the BTA25H-800CW3G datasheet PDF. This datasheet also covers the BTA25H-600CW3G variant, as both devices belong to the same triacs family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Blocking Voltage to 800 Volts.
  • On-State Current Rating of 25 Amperes RMS at 95°C.
  • Uniform Gate Trigger Currents in Three Quadrants.
  • High Immunity to dV/dt.
  • 500 V/ms minimum at 150°C.
  • Minimizes Snubber Networks for Protection.
  • Industry Standard TO-220AB Package.
  • Internally Isolated.
  • High Commutating dI/dt.
  • 4.0 A/ms minimum at 150°C.
  • Internally Isolated (2500 VRMS).
  • These are Pb.
  • Fre.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BTA25H-600CW3G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BTA25H-600CW3G, BTA25H-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 Volts • On-State Current Rating of 25 Amperes RMS at 95°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 500 V/ms minimum at 150°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package − Internally Isolated • High Commutating dI/dt − 4.