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BSS84 - P-Channel MOSFET

General Description

This P channel enhancement mode field

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance and to provide rugged and reliable performance and fast switching.

Key Features

  • 0.13 A,.
  • 50 V, RDS(on) = 10 W at VGS =.
  • 5 V.
  • Voltage.
  • Controlled P.
  • Channel Small.
  • Signal Switch.
  • High.
  • Density Cell Design for Low RDS(on).
  • High Saturation Current.
  • This Device is Pb.
  • Free and Halogen Free DATA SHEET www. onsemi. com D G S SOT.
  • 23.
  • 3 CASE 318.
  • 08.

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Datasheet Details

Part number BSS84
Manufacturer onsemi
File Size 238.07 KB
Description P-Channel MOSFET
Datasheet download datasheet BSS84 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Field-Effect Transistor BSS84 General Description This P−channel enhancement−mode field−effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process minimizes on−state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low−voltage applications requiring a low−current high−side switch. Features • −0.