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BSR57. For precise diagrams, and layout, please refer to the original PDF.
N-Channel JFET Low-Frequency Low-Noise Amplifier BSR57 • This device is designed for low−power chopper or switching application sourced from process 51 ABSOLUTE MAXIMUM R...
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er or switching application sourced from process 51 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−Gate Voltage Gate−Source Voltage VDGO VGSO 40 V −40 V Forward Gate Current Total Power Dissipation Up to Tamb = 40°C IGF 50 mA Ptot 250 mW Storage Temperature Range TSTG −55 to +150 °C Junction Temperature TJ 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET www.onsemi.com 3 1 2 SOT−23 CASE 318−08 ST
BSR57 Datasheet
