2SK3816 - N-Channel Power MOSFET

onsemi

Key Features

ON-resistance RDS(on)1=20mΩ(typ. ).
Input capacitance Ciss=1780pF(typ. ).
4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 40 160 1.65 50 Unit V V A A W W Continued on next page. Package Dimensions unit : mm (typ) 7537-001 Package Dimensio.

2SK3816 n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	2SK3816
Manufacturer	onsemi
File Size	203.17 KB
Description	N-Channel Power MOSFET
Datasheet	2SK3816 Datasheet

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Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 40 160 1.65 50 Unit V V A A W W Continued on next page. Package Dimensions unit : mm (typ) 7537-001 Package Dimensions unit : mm (typ) 7535-001 2SK3816-1E 10.0 4.5 8.0 1.3 10.0 4 4.5 1.3 2SK3816-DL-1E 8.0 0.9 1.75 1.4 9.2 1.2 13.4 0.9 1.75 3.0 9.2 1.2 1.35 7.9 7.9 5.3 5.3 3.0 1.47 1.27 0.8 123 2.