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2SD600K - PNP / NPN Epitaxial Planar Silicon Transistors

Download the 2SD600K datasheet PDF. This datasheet also covers the 2SD600 variant, as both devices belong to the same pnp / npn epitaxial planar silicon transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High breakdown voltage VCEO 100/120V, High current 1A.
  • Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Co.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SD600-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SD600K
Manufacturer onsemi
File Size 94.38 KB
Description PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet download datasheet 2SD600K Datasheet

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Other Datasheets by onsemi

Part Number Description
2SD600 PNP / NPN Epitaxial Planar Silicon Transistors
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2SD1062 PNP / NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.