Full PDF Text Transcription for 20N60A4D (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
20N60A4D. For precise diagrams, and layout, please refer to the original PDF.
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features...
View more extracted text
a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti−parallel is the development type TA49372. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplie
20N60A4D Datasheet
