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1N5823 ,1N5824 ,1N5825
1N5823 and 1N5825 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
• Extremely Low VF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction • Shipped in plastic bags, 500 per bag • Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to
the part number
• Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded • Weight: 1.
1N5825 Datasheet
