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RD48F3000P0ZTQE - Single Bit per Cell Single Bit per Cell

Download the RD48F3000P0ZTQE datasheet PDF (RD48F3000P0ZBQE included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for single bit per cell single bit per cell.

Features

  • High Performance:.
  • 65ns initial access time for Easy BGA and QUAD+.
  • 75ns initial access time for TSOP.
  • 25ns 8-word asynchronous-page read mode.
  • 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode.
  • 4-, 8-, 16- and continuous-word options for burst mode.
  • 1.8V Low Power buffered programming at 1.8MByte/s (Typ) using 256-word buffer.
  • Buffered Enhanced Factory Programming at 3.2MByte/s (typ) using.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RD48F3000P0ZBQE-Numonyx.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RD48F3000P0ZTQE
Manufacturer Numonyx
File Size 1.05 MB
Description Single Bit per Cell Single Bit per Cell
Datasheet download datasheet RD48F3000P0ZTQE Datasheet
Other Datasheets by Numonyx

Full PDF Text Transcription

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Numonyx® Axcell™ P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC) Datasheet Product Features „ High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode — 4-, 8-, 16- and continuous-word options for burst mode — 1.8V Low Power buffered programming at 1.8MByte/s (Typ) using 256-word buffer — Buffered Enhanced Factory Programming at 3.2MByte/s (typ) using 256-word buffer „ Architecture: — Asymmetrically-blocked architecture — Four 32-KByte parameter blocks: top or bottom configuration — 128-KByte array blocks — Blank Check to verify an erased block „ Voltage and Power: — VCC (core) voltage: 1.7V – 2.
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