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JS28F512M29EWLx - 3 V supply flash memory

Download the JS28F512M29EWLx datasheet PDF (JS28F512M29EWHx included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 3 v supply flash memory.

Description

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Features

  • Supply voltage.
  • VCC = 2.7 to 3.6 V for Program, Erase and Read.
  • VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read.
  • Page size: 16 words or 32 bytes.
  • Page access: 25 ns.
  • Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program.
  • 512-word program buffer Programming time.
  • 0.88 µs per byte (1.14MB/s) typical when using full buff.

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Note: The manufacturer provides a single datasheet file (JS28F512M29EWHx_Numonyx.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number JS28F512M29EWLx
Manufacturer Numonyx
File Size 2.20 MB
Description 3 V supply flash memory
Datasheet download datasheet JS28F512M29EWLx Datasheet

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Full PDF Text Transcription

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Numonyx™ Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block) 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program — 512-word program buffer Programming time — 0.88 µs per byte (1.
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