Datasheet4U Logo Datasheet4U.com

NPT2019 - GaN HEMT

Datasheet Summary

Description

The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.

This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry standard surface mount plastic package.

, 2.5 GHz): VDS = 4

Features

  • Suitable for linear and pulsed.

📥 Download Datasheet

Datasheet preview – NPT2019

Datasheet Details

Part number NPT2019
Manufacturer Nitronex
File Size 889.29 KB
Description GaN HEMT
Datasheet download datasheet NPT2019 Datasheet
Additional preview pages of the NPT2019 datasheet.

📁 Similar Datasheet

  • NPT2010 - GaN on Silicon General Purpose Amplifier (MACOM)
  • NPT2020 - GaN Wideband Transistor (MA-COM)
  • NPT2020-SMB2 - GaN Wideband Transistor (MA-COM)
  • NPT2021 - GaN Wideband Transistor (MA-COM)
  • NPT2022 - HEMT D-Mode Amplifier (MA-COM)
  • NPT25 - Press Fit Triac (Naina Semiconductor)
  • NPT25100 - 28V GaN Power Amplifier (MACOM)
  • NPT25100B - 28V GaN Power Amplifier (MACOM)
  • NPT25100P - 28V GaN Power Amplifier (MACOM)
  • NPT1015B - GaN Wideband Transistor (MA-COM)
Other Datasheets by Nitronex

Full PDF Text Transcription

Click to expand full text
NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and pulsed applications  Tunable from DC-6 GHz  48V Operation  Industry Standard Plastic Package  High Drain Efficiency (>60%) Applications  Defense Communications  Land Mobile Radio  Avionics  Wireless Infrastructure  ISM Applications  VHF/UHF/L/S-Band Radar DC-6 GHz 25W GaN HEMT Product Description The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry standard surface mount plastic package. RF Specifications (Pulsed*, 2.
Published: |