• Part: 10EDB10
  • Description: DIODE
  • Category: Diode
  • Manufacturer: Nihon Inter Electronics
  • Size: 62.33 KB
Download 10EDB10 Datasheet PDF
Nihon Inter Electronics
10EDB10
FEATURES Type : 1A 100V Tj =150 °C OUTLINE DRAWING - Miniature Size - Low Forward Voltage drop - Low Reverse Leakage Current - High Surge Capability - 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Approx Net Weight:0.17g 10EDB10 100 50Hz Half Sine Wave Resistive Load Ta=39°C - 1 Ta=26°C - 2 1.0 0.9 1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 45 Unit V A A A °C °C Electrical - Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Symbol IRM VFM Conditions Min. Typ. Max. 10 1.0 110 140 Unit µA V °C/W Tj= 25°C, VRM= VRRM Tj= 25°C, IFM= 1.0A Junction to P.C. Board mounted- 1 Thermal Resistance Rth(j-a) Ambient Without Fin - 2 - 1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides)...