Datasheet Details
| Part number | NV6169 |
|---|---|
| Manufacturer | Navitas |
| File Size | 2.21 MB |
| Description | Power IC |
| Datasheet |
 NV6169 Datasheet
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Description
This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation.
Features
- GaNFast™ Power IC.
- Monolithically-integrated gate drive.
- Wide VCC range (9 to 30 V).
- Programmable turn-on dV/dt.
- 200 V/ns dV/dt immunity.
- 800 V Transient Voltage Rating.
- 650 V Continuous Voltage Rating.
- Low 45 mΩ resistance.
- Zero reverse recovery charge.
- 2 MHz operation GaNSense™ Technology.
- Integrated loss-less current sensing.
- Short-circuit protection.
- Over-temperature protection.