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1. Features
GaNFast™ Power IC • Monolithically-integrated gate drive • Wide VCC range (10 to 30 V) • Programmable turn-on dV/dt • 200 V/ns dV/dt immunity • 800 V Transient Voltage Rating • 700 V Continuous Voltage Rating • Low 210 mΩ resistance • Zero reverse recovery charge • 2 MHz operation GaNSense™ Technology • Integrated loss-less current sensing • Short-circuit protection • Over-temperature protection • Autonomous low-current standby mode • Auto-standby mode input Small, low-profile SMT QFN • 6 x 8 mm footprint, 0.
NV6135C Datasheet
