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NPD8301 - N-Channel Monolithic Dual JFET

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Description

formance differential amplifiers requiring tightly matched gate-source voltage, low drift, high commonmode rejection, and low output conductance.

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Datasheet Details

Part number NPD8301
Manufacturer National Semiconductor
File Size 32.27 KB
Description N-Channel Monolithic Dual JFET
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Process 83 NPD8301-03 N-Channel Monolithic Dual JFETs General Description The NPD8301 thru NPD8303 series of N-channel monolithic dual JFETs is designed for low cost, high per- formance differential amplifiers requiring tightly matched gate-source voltage, low drift, high commonmode rejection, and low output conductance. Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage Gate Current Total Package Dissipation (25°C Free-Air) -40V 50 mA 350 mW Power Derating (to +125°C) 3.5 mW/°C Storage Temperature Range Operating Temperature Range -55°C to +125°C -55° C to +1 25° C Lead Temperature (1/16" from case for 10 seconds) 300°C Molded Dual-ln-Line Package (Nl Dos: (2.286) —— 110.160) ----w^l^lia 0.
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