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LF257 - JFET Input Operational Amplifiers

Download the LF257 datasheet PDF. This datasheet also covers the LF256 variant, as both devices belong to the same jfet input operational amplifiers family and are provided as variant models within a single manufacturer datasheet.

Description

These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology).

Features

  • Advantages n Replace expensive hybrid and module FET op amps n Rugged JFETs allow blow-out free handling compared with MOSFET input devices n Excellent for low noise.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LF256-NationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
LF257 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS STMicroelectronics
LF257 JFET Input Operational Amplifiers Texas Instruments
LF251 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER STMicroelectronics
LF253 Wide bandwidth dual JFET operational amplifiers STMicroelectronics
LF255 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS STMicroelectronics

Other Datasheets by National Semiconductor (Texas Instruments)

Part Number Description
LF256 JFET Input Operational Amplifiers
LF211 Voltage Comparators
LF2650 quad JFET analog switch
LF298 Monolithic Sample-and-Hold Circuits

Full PDF Text Transcription

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LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers December 2001 LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers General Description These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
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