Datasheet Details
| Part number | 2N5953 |
|---|---|
| Manufacturer | National Semiconductor (now Texas Instruments) |
| File Size | 31.89 KB |
| Description | N-Channel JFET |
| Datasheet |
 2N5953 Datasheet
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Download the 2N5953 datasheet PDF. This datasheet also includes the 2N5949 variant, as both parts are published together in a single manufacturer document.
| Part number | 2N5953 |
|---|---|
| Manufacturer | National Semiconductor (now Texas Instruments) |
| File Size | 31.89 KB |
| Description | N-Channel JFET |
| Datasheet |
2N5953 Datasheet
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The 2N5949 thru 2N5953 series of N-channel JFETs is characterized for low frequency to VHF amplifiers requiring tightly specified IqSS ranges.
Absolute Maximum Ratings (25°o
Reverse Gate-Drain or Gate-Source Voltage Gate Current
30V
10 mA
Total Device Dissipation at 25°C Case Temperature (Derate 2.88 mW/°C)
360 mW
Total Device Dissipation at 25°C Lead Temperature (Derate 4 mW/°C)
500 mW
Storage Temperature Range
~65°C to +150 C
Lead Temperature (1/16" from case
for 10 seconds)
260 C
rj.i75-o.ia5 ( i-i
"~
0.594 i(-15.088)"
(1.143-1.397) 0.045-0.055 (l7t43^U97)
PIN FET
1
S
2
D
3
G
0.003-1 1 j 5° (TVP) ,
(1.143- 1.397)
Electrical Characteristics (25°c unless otherwise noted)
PARAMETER
6VQSS
Vqs
loss rds|0 "'
9fs
R " |Y °=> Re|Y h' Re (1 Y;lcs )
'
C,ss Crss
NF
6,1
Gate-Source Breakdown
.,
Vol|ttage
VQS" 15V,V DS = Gl - -1 /-(A, V DS -
T A = 100'C
Gate-Source Cutoff Voltage
Gate Source Voltage
V D s - 15V, Id = 100 ii
V DS - 15V
mA Dl = 1.2 In- 1 mA lO -0.7 mA mA Di = 0.4 In = 0-25 mA
Saturation Drain _ Current
V D S= 1BV, VQS" 0, (Note 1)
Drain-Source ON
Resistance
vgs-o, di = o
f- 1 kHz
Common-Source Forward Transconductance
Common-Source Output Conductance
V DS - 15V,V G S=0
f - 1 kHz
Common-Source Output Conductance
Common-Source Transconductance
V 0S = 15V,V G S=0 f = 100 MHz
Common-Source Input Conductance
Common-Source Input capacitance
Common-Source Reverse -Trransfler rC-apacitance
VDS" 15V.VGS-0
f - 1 MHz
Noise Figure
Equivalent Input Noise Voltage
V D S- 15V, V G S =
f= 100 MHz, RG ^ 1 kil f = 1 kHz, RG = 1 Mil
VDS" 15V, VgS"0 f - 1 kHz
2N5949
MIN MAX
-1
-200
2N5950
MIN MAX
-1
-200
2N5951
MIN MAX
1
-200
2N5952
MIN MAX
-1
-200
2N5953
MIN MAX
-1
-200
UNITS nA
30
30
-30
-30
-30
V
3
-7
-2.5
-6
2
5
1.3
3.5
-0.8 -3
V
-2.25 -6
-1.8
5
-1.3 -4.5
V
0.75 3
-0.5 -2.5
12
18
Process 50 2N5949-53 N-Channel JFETs General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5953 | N-Channel RF Amplifier | Fairchild Semiconductor |
 |
2N5953 | SILICON N-CHANNEL JFETS | Central Semiconductor |
| Part Number | Description |
|---|---|
| 2N5950 | N-Channel JFET |
| 2N5951 | N-Channel JFET |
| 2N5952 | N-Channel JFET |
| 2N5902 | N-Channel Monolithic Dual JFET |
| 2N5903 | N-Channel Monolithic Dual JFET |
| 2N5904 | N-Channel Monolithic Dual JFET |
| 2N5905 | N-Channel Monolithic Dual JFET |
| 2N5906 | N-Channel Monolithic Dual JFET |
| 2N5907 | N-Channel Monolithic Dual JFET |
| 2N5908 | N-Channel Monolithic Dual JFET |