Datasheet4U Logo Datasheet4U.com

NT5TU32M16DG - 512Mb DDR2 SDRAM

Download the NT5TU32M16DG datasheet PDF. This datasheet also covers the NT5TU64M8DE variant, as both devices belong to the same 512mb ddr2 sdram family and are provided as variant models within a single manufacturer datasheet.

Description

The 512Mbit Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM containing 536,870,912 bits.

It is internally configured as a quad-bank DRAM.

The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device.

Features

  • (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance adjustment and (5) an ODT (On-Die Termination) function. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a sou.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NT5TU64M8DE_Nanya.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NT5TU32M16DG
Manufacturer Nanya
File Size 2.35 MB
Description 512Mb DDR2 SDRAM
Datasheet download datasheet NT5TU32M16DG Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NT50198 TFT-LCD 3-Channel Charge Pump Power IC Novatek
NT51007D 1200CH TFT LCD Source Driver Novatek
NT51021 1803CH Source Driver Novatek
NT511740C5J Fast Page Mode with EDO DRAM Nanya Technology
NT511740D0J Fast Page Mode DRAM Nanya Technology

Other Datasheets by Nanya

Part Number Description
NT5TU32M16CG 512Mb DDR2 SDRAM C-Die
NT5TU32M16EG DDR2 512Mb SDRAM
NT5TU32M16FG Commercial and Industrial DDR2 512Mb SDRAM
NT5TU128M4CE 512Mb DDR2 SDRAM C-Die
NT5TU128M8DE-3C 1Gb DDR2 SDRAM

Full PDF Text Transcription

Click to expand full text
NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM                                        Feature CAS Latency Frequency -3C/3CI* Speed Bins (DDR2-667-CL5) Parameter Clock Frequency Min. 125 15 15 60 45 5 3.75 3 Max. 333 70K 8 8 8 (DDR2-800-CL5) Min. 125 12.5 12.5 57.5 45 5 3.75 2.5 2.5 Max. 400 70K 8 8 8 8 (DDR2-1066-CL7) Min. 125 12.5 12.5 57.5 45 5 3.75 2.5 2.5 1.875 Max. 533 70K 8 8 8 8 8 (DDR2-1066-CL6) Min. 125 11.25 11.25 56.25 45 5 3.75 2.5 1.875 1.875 Max. 533 70K 8 8 8 8 8 tCK(Avg.) MHz ns ns ns ns ns ns ns ns ns -AC/ACI* -BE* -BD* Units tRCD  tRP  tRC  tRAS  tCK(Avg.)@CL3  tCK(Avg.)@CL4 tCK(Avg.)@CL5 tCK(Avg.)@CL6 tCK(Avg.)@CL7 *The timing specification of high speed bin is backward compatible with low speed bin z z z 1.8V ± 0.
Published: |