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NT5CC512M8EQ - Commercial and Industrial DDR3 4Gb SDRAM

Datasheet Summary

Features

  • Basis DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM.
  • Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes.
  • Power Saving Mode - Power Down Mode.
  • Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%).
  • Signal Synchroniza.

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Datasheet Details

Part number NT5CC512M8EQ
Manufacturer Nanya
File Size 3.35 MB
Description Commercial and Industrial DDR3 4Gb SDRAM
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DDR3-4Gb E-Die NT5CB(C)512M8EQ/NT5CB(C)256M16ER Commercial and Industrial DDR3(L) 4Gb SDRAM Features  Basis DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM  Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes  Power Saving Mode - Power Down Mode  Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%)  Signal Synchronization - Write Leveling via MR settings 5 - Read Leveling via MPR  Interface and Power Supply - SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V) - SSTL_1352 for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.
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