NT5CB256M8GN Datasheet PDF - Nanya 2Gb DDR3 SDRAM G-Die Specs

NT5CB256M8GN - 2Gb DDR3 SDRAM G-Die

This page provides the datasheet information for the NT5CB256M8GN, a member of the NT5CB512M4GN 2Gb DDR3 SDRAM G-Die family.

Datasheet Summary

Description

The 2Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 2,147,483,648 bits.

It is internally configured as an octal-bank DRAM.

The 2Gb chip is organized as 64Mbit x 4 I/O x 8 bank and 32Mbit x 8 I/O x 8 banks .

Features

and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 2 REV 1.1 08/ 2011 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M.

Datasheet Details

Part number	NT5CB256M8GN
Manufacturer	Nanya
File Size	2.34 MB
Description	2Gb DDR3 SDRAM G-Die
Datasheet	NT5CB256M8GN Datasheet
Additional preview pages of the NT5CB256M8GN datasheet.

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Full PDF Text Transcription

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2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V(JEDEC Standard Power Supply)  VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.

Published: Oct 18, 2018 |